8
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
VDD
=28Vdc,IDQA
= 280 mA
f
MHz
Max Pout
(1)
Zsource
?
Zload
?
Watts
dBm
2300
58
47.6
8.42 -- j14.3
3.51 -- j5.02
2350
55
47.4
11.4 -- j13.4
3.75 -- j5.03
2400
55
47.4
17.7 -- j9.34
3.14 -- j5.63
(1) Maximum output power measurement reflects pulsed 1 dB gain
compression.
Zsource
= Test circuit impedance as measured from gate contact to
ground.
Zload
= Test circuit impedance as measured from drain contact to
ground.
Figure 11. Carrier Side Load Pull Performance ? Maximum P1dB Tuning
Zsource
Zload
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD
=28Vdc,IDQA
= 280 mA
f
MHz
Max Eff.
(1)
%
Zsource
?
Zload
?
2300
60.9
8.41 -- j14.3
7.02 -- j3.44
2350
60.1
11.4 -- j13.4
6.84 -- j2.41
2400
60.0
17.7 -- j9.35
6.53 -- j2.92
(1) Maximum efficiency measurement reflects pulsed 1 dB gain
compression.
Zsource
= Test circuit impedance as measured from gate contact to
ground.
Zload
= Test circuit impedance as measured from drain contact to
ground.
Figure 12. Carrier Side Load Pull Performance ? Maximum Efficiency Tuning
Zsource
Zload
Device
Under
Test
Output
Load Pull
Tuner
Input
Load Pull
Tuner
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